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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5140397 B1

PDFFull Text
Date of Patent:
Aug. 18, 1992

Filed:

Feb. 10, 1989

Amorphous silicon photoelectric device

Applicant:
Inventors:

Koichi Haga, Ohgawara, JP;

Kenji Yamamoto, Miyagi, JP;

Masafumi Kumano, Aoyama Sendai, JP;

Akishige Murakami, Shibata, JP;

Assignees:

Ricoh Company, Ltd., Tokyo, JP;

Ricoh Research Institute of General Electronics, Shibata, JP;

Attorney:

Cooper & Dunham

Primary Examiner:

Jerome Jackson, Jr

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357-2 ; 357-4 ;
Abstract

A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.

Find Patent Forward Citations

Haga, Koichi. (1992). Amorphous silicon photoelectric device (U.S. Patent No. 5140397). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5140397

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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