The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 1992

Filed:

Dec. 11, 1989
Applicant:
Inventors:

Taiji Ema, Kawasaki, JP;

Masahiro Nakahara, Miyazaki, JP;

Assignees:

Fujitsu Limited, Kanagawa, JP;

Kyushu Fujitsu Electronics Limited, Kagoshima, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365185 ; 36518909 ; 365204 ; 365233 ; 3652335 ;
Abstract

An electrically erasable and programmable read only memory includes a memory cell array having a plurality of memory cells coupled to bit lines and word lines. Each of the memory cells includes a select transistor controlled by one of the word lines, a memory transistor of the enhancement type coupled to one of the bit lines through the select transistor and having a control gate, and a drive transistor having a gate coupled to the one of the word lines and applying a control gate voltage supplied through a program line to the control gate of the memory transistor. Further, the electrically erasable and programmable read only memory includes a select device for selecting at least one of the bit lines and one of the word lines on the basis of an address supplied from an external device, and a sense amplifier for outputting data stored in the memory cell array. Also provided is a discharging device which discharges the drain regions and the control gates of the memory transistors after a predetermined time has passed from a transition of the address and application of the control gate voltage.


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