The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1992
Filed:
Jul. 02, 1990
Yoshihiko Mizushima, Shizuoka, JP;
Toru Hirohata, Shizuoka, JP;
Tsuneo Ihara, Shizuoka, JP;
Minoru Niigaki, Shizuoka, JP;
Kenichi Sugimoto, Shizuoka, JP;
Koichiro Oba, Shizuoka, JP;
Toshihiro Suzuki, Shizuoka, JP;
Tomoko Suzuki, Shizuoka, JP;
Hamamatsu Photonics K. K., Shizuoka, JP;
Abstract
A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.