The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1992
Filed:
Aug. 20, 1990
Chen-Chi P Chang, Newport Beach, CA (US);
Mei F Li, Mission Viejo, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
Highly doped N- and P-type wells (16a, 16b) in a first silicon layer (16) on an insulator layer (14) of a SIMOX substrate (10). Complementary MOSFET devices (52,54,58,62) are formed in lightly doped N- and P-type active areas (22a, 22b) in a second silicon layer (22) formed on the first silicon layer (16). Adjacent active areas (22a, 22b) and underlying wells (16a, 16b) are isolated from each other by trenches (36,78) filled with a radiation-hard insulator material. Field oxide layers (42,64) are formed of a radiation-hard insulator material, preferably boron phosphorous silicon dioxide glass, over the surface of the second silicon layer (22) except in contact areas (68) of the devices (52,54,58,62). The devices (52,54,58,62) are formed in the upper portions of the active areas (22a, 22b), and are insensitive to the interfacial states of the SIMOX substrate (10). The buried wells (16a, 16b ) under the active areas (22a, 22b) have low resistance and enable the devices (52,54,58,62) to have high snap-back voltages. The absence of sharp edges also eliminates edge leakage upon high dosage irradiation, thus producing devices that are more radiation-resistant.