The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1992
Filed:
Dec. 12, 1988
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A hybrid CMOS-bipolar memory cell for a high speed memory includes a CMOS latch which has two storage nodes (104) and (106) for storing two logic states. The CMOS latch is disposed between a high voltage node (110) and a low voltage node (114). The two nodes are maintained at a predetermined voltage to maintain a static state. A bipolar current drive transistor (120) is provided which is connected to one of the storage nodes (106) to provide a low source impedance for output from the memory cell. A work line (44) is connected to the high voltage node (110) for selection thereof by varying between two predetermined voltages. The cell is written to be selectively discharging either node (104) or (106) to a low voltage node (114) through bipolar transistors (122) and (124). The bipolar transistor (122) and (124) provide high transconductance switches for selectively discharging the storage nodes (104) and (106).