The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1992
Filed:
May. 31, 1990
Applicant:
Inventors:
Assignee:
SGS-Thomson Microelectronics, Inc., Carrollton, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437186 ; 437 46 ; 437 48 ; 437 52 ; 437 59 ; 437 60 ; 437915 ;
Abstract
A CMOS SRAM cell has a polycrystalline silicon signal line between a common node, which is the data storage node, and the power supply. A field effect device is fabricated within this polycrystalline silicon signal line. The channel of the field effect device is separated from an active area in the substrate by a thin gate dielectric, and the active region within the substrate functions as the control gate for the field effect device. Such a device can be used to provide polycrystalline silicon P-channel transistors for use in CMOS SPRAM cells.