Quantum lithography mask and fabrication method

Abstract

Thin film masks with precisely located and positioned features are manufactured using a methodology herein called quantum lithography. A thin film layer, such as a chromium film, is deposited on a substrate such as quartz glass. Then, a set of precisely located dividing lines is defined in the thin film layer. The dividing lines are spaced in accordance with a predefined coordinate system and intersect so as to define tiles between the dividing lines. An electron beam pattern generator may be used to generate a large number of identical masks having a thin film with precisely located dividing lines. These masks will each be customized by subsequent processing steps. Each such mask is customized by selectively identifying a subset of the tiles and removing the selected subset of tiles to form a mask pattern in the thin film layer. The resulting pattern has very precisely located edges because the edges correspond to dividing lines formed using a precision patterning system, such an electron beam pattern generator. However, the actual light blocking pattern of the mask can be defined using a much lower accuracy pattern generator. An alternate embodiment of the invention uses a quantized additive process. A set of precisely located boundary lines are formed on a substrate to form a generic mask. The generic mask is customized by removing a subset of the boundary lines, and then selectively depositing a masking material inside the closed regions defined by the remaining boundary lines.