The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1992
Filed:
Jun. 27, 1991
Gerold W Neudeck, West Lafayette, IN (US);
Jack L Glenn, Jr, Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
An integrated circuit vertical bipolar transistor includes monocrystalline emitter, base and collector contacts for electrically contacting the transistor's emitter, base and collector regions, respectively. The collector, base contact and emitter contact are preferably insulated from one another by oxide regions which are formed from the monocrystalline collector and monocrystalline base contacts. Since all of the contacts are formed of monocrystalline material and the oxide isolation is formed from monocrystalline material, high performance devices are formed. The process of forming the transistor self aligns the base to the collector and the emitter to the base. The monocrystalline base contact is also self aligned to the base and the monocrystalline emitter contact is self aligned to the emitter. The process preferably uses epitaxial lateral overgrowth and selective epitaxial growth from a mesa region to form the monocrystalline contacts. A shallow phosphorus implant into the base contact is used to preferentially grow the oxide between the base contact and emitter contact.