The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 1992

Filed:

Apr. 09, 1991
Applicant:
Inventors:

Kazuhisa Tsuchiya, Sendai, JP;

Kazuya Miyazaki, Sendai, JP;

Satoshi Hatsumori, Sendai, JP;

Satoshi Sekine, Yokohama, JP;

Taichi Morikawa, Aizuwakamatsu, JP;

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 235 ; 357 41 ; 365185 ;
Abstract

A parallel transistor circuit 10 with non-volatile function is provided on a single semiconductor body, comprising an enhancement-type MOS transistor 1 having a drain electrode 25a connected to a drain node 25c, a gate electrode 37a connected to a gate node 37c, and a source electrode 23a connected to a source node 23c; and a floating gate-type MOS transistor 3 having a drain electrode 25b connected to the drain node, a floating gate 33, a control gate electrode 37b connected to the gate node, and a source electrode 23b connected to the source node.


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