The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1992
Filed:
Jun. 12, 1989
Applicant:
Inventors:
John C Bean, New Providence, NJ (US);
George A Rozgonyi, Chatham, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437106 ; 148D / ; 148D / ; 148D / ; 148D / ; 437 64 ; 437 89 ; 437 90 ; 437944 ;
Abstract
A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature within the range between 400 degrees C. and 700 degrees C. and the polycrystalline material that forms is removed.