The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 1992

Filed:

Oct. 05, 1990
Applicant:
Inventors:

Porponth Sichanugrist, Tokyo, JP;

Hirohisa Suzuki, Tokyo, JP;

Hirofumi Nishi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136249 ; 136258 ; 437-4 ; 437173 ; 437205 ;
Abstract

A photovoltaic device and a process for manufacturing a photovoltaic device which includes providing a plurality of spaced transparent electrode layer regions on an insulating transparent substrate plate, forming an amorphous semiconductor layer over the spaced transparent electrode layer regions, forming a patterned conductive printed electrode layer over the amorphous semiconductor layer to form a plurality of photovoltaic regions, and then irradiating the photovoltaic regions with a laser beam from the substrate plate side to heat and melt the transparent electrode, amorphous semiconductor, and conductive printed electrode in each photovoltaic region, thereby forming in each photovoltaic region a conductive path made of an alloy formed by the melting, thus electrically connecting the photovoltaic regions in series.


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