The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1992

Filed:

May. 25, 1990
Applicant:
Inventors:

Kazuhisa Uomi, Hachioji, JP;

Shinji Sasaki, Komoro, JP;

Tomonobu Tsuchiya, Kodaira, JP;

Naoki Chinone, Chofu, JP;

Tsukuru Ohtoshi, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 50 ; 357-4 ; 357 16 ; 357 17 ;
Abstract

A semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light are interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc., includes a quantum well structure having a well region and a barrier region. The semiconductor optical device is remarkably improved with the degree of design freedom as it relates to parameters such as thickness and selection of material without deteriorating the quantum effect, by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.


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