Sense enable timing circuit for a random access memory

Abstract

A sense enable timing circuit for addressing data locations in a static random access memory (RAM) array provides a plurality of memory cells formed into a dummy row and a dummy column that is connected to a memory cell at a far end opposite an X-decoder input of said dummy row. The dummy row and column are constructed in conjunction on the same semiconductor chip with a RAM array comprising a plurality of memory cells formed into rows and columns. The dummy column connects to a dummy word line of the dummy row and includes dummy bit lines. Each of the dummy word and bit lines are separate from the word lines and bit lines of the array. The dummy word line is addressed at a time synchronized with the addressing of the array word lines. The occurrence of a predetermined voltage change on at least one of the dummy bit lines, carrying a signal of at least one memory cell of the dummy column, is determined in response to the addressing of the dummy word line. In response to this determination, the sensing of array bit line signal is enabled. The signal carried by the dummy bit line may be generated by a plurality of adjacent memory cells.