The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1992

Filed:

Jan. 10, 1991
Applicant:
Inventor:

Masanobu Ogino, Yokosuka, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 59 ; 357 49 ; 357 50 ; 357 52 ;
Abstract

A semiconductor device includes a composite semiconductor substrate formed by disposing first and second semiconductor substrates in close contact with each other. At least one dielectric layer is formed in the composite semiconductor substrate. At least one polycrystalline layer is formed adjacent to the dielectric layer.


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