The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1992
Filed:
Feb. 07, 1991
Applicant:
Inventor:
Joseph Maserjian, Valencia, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357-4 ; 357 16 ;
Abstract
A new approach to long-wave-infrared (LWIR) technology is based on molecular beam epitaxy (MBE) growth of holeimmobilized doping superlattices (12) in narrow band gap III-V semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures (10, 10', 10') suitable for focal plane arrays. The objective of this approach is an LWIR detector possessing the advantages of high detectivity performance, to wavelengths of at least about 16 .mu.m, at operating temperatures of 65K, where long-duration space refrigeration is plausible.