The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1992

Filed:

Apr. 18, 1991
Applicant:
Inventors:

Yogi K Puri, Vienna, VA (US);

Raymond A Schulz, Manassas, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307446 ; 307443 ; 307570 ;
Abstract

A BiCMOS NAND circuit is disclosed employing low threshold n-channel FET transistors in conjunction with standard threshold n-channel FET transistors and standard threshold p-channel FET transistors. Circuit performance is maintained as the circuit devices are scaled to physically smaller FET devices and reduced power supply voltage. Furthermore, the circuit is interface compatible with standard CMOS circuits.


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