The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1992
Filed:
Mar. 28, 1991
Takahiko Oohara, Higashimurayama, JP;
Masaaki Usui, Itami, JP;
Nobuyoshi Ogasawara, Itami, JP;
Kotaro Mitsui, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, both of, JP;
Nippon Telegraph and Telephone Corporation, both of, JP;
Abstract
A photovoltaic semiconductor device includes a first conductivity type silicon substrate having a first main surface, a first conductivity type compound semiconductor layer disposed on a first, major portion of the first main surface of the silicon substrate, a second conductivity type compound semiconductor layer disposed on the first conductivity type compound semiconductor layer, a first electrode connected to the second conductivity type compound semiconductor layer, a portion of the first electrode being disposed on a second, minor portion of the first main surface of the silicon substrate with an intervening insulating film, and a second electrode disposed on a third, minor portion of the first main surface of the silicon substrate.