The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1992
Filed:
Jun. 18, 1990
Yamatake-Honeywell Co., Ltd., Tokyo, JP;
Abstract
In this sensitive, relatively inexpensive to manufacture, photo-detector, one surface of an amorphous silicon photovoltaic element is bonded to a thin transparent conductive layer formed on an insulating base. A conductive pattern is formed on the opposite surface of the element. The conductive layer may be formed of indium-tin oxide (ITO) and the photovoltaic element may be an element with an intrinsic semiconducting layer between p and n doped layers. The photovoltaic element generates component currents in response to photons passing through the transparent base and conducting layer. Those current components flowing predominantly in a direction at right angles to the photovoltaic element surfaces are summed by the conductive pattern which acts as a spatial filter, responsive to desired ones of these components and relatively unresponsive to other current components. The spatial filter conductive pattern and the transparent conducting layer may be coupled as the input to a suitable high impedance current detector.