The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1992
Filed:
Nov. 17, 1989
Akihisa Uchida, Higashiyamoto, JP;
Katsumi Ogiue, Hinode, JP;
Toru Koizumi, Musashimurayama, JP;
Keiichi Higeta, Ohme, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
This invention relates to a semiconductor integrated circuit device including highly self-aligned bipolar transistors. The semiconductor integrated circuit device a semiconductor body at least a first protruding portion and a hollow portion, disposed as a trench. The hollow portion being adjacent to the first protruding portion and being lower than an upper surface of the first protruding portion and including an isolation groove which is formed along a side surface of the protruding portion and in self-alignment with a peripheral edge portion of the upper surface of the first protruding portion. The device also has insulating material formed on a surface of the hollow portion so as to fill the insulation groove, a first semiconductor region of a first conductivity type formed in the first protruding portion, a portion of said first semiconductor region being exposed to the side surface of the protruding portion, a second semiconductor region of a second conductivity type opposite to the first conductivity type formed in the first protruding portion on the first semiconductor region, a third semiconductor region of the second conductivity type formed in the first protruding portion under the first semiconductor region and a polycrystalline silicon film formed on the insulating material in contact with at least the portion of the first semiconductor region exposed to the side surface of the protruding portion.