The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 1992

Filed:

Oct. 03, 1990
Applicant:
Inventors:

Makoto Hideshima, Tokyo, JP;

Wataru Takahashi, Kawasaki, JP;

Masahi Kuwahara, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437161 ; 148D / ;
Abstract

A conductivity modulation type semiconductor device comprises a semiconductor anode substrate of a P type having two surfaces, a semiconductor substrate of an N type having two surfaces, the semiconductor substrate having a high impurity layer-like region on one surface thereof and a low concentration drain region on the other surface thereof, a body region of P type formed in the drain region and exposed at one surface of the semiconductor substrate, source regions of an N type formed in the body region and exposed at the other surface of the semiconductor substrate, and a gate layer formed within the isulating layer, which extends between the source and drain regions, on the body region. The other surface of the anode substrate is polished and is intimately joined to the polished surface of the semiconductor substrate to form a junction layer therebetween.


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