The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1992
Filed:
Dec. 07, 1990
Applicant:
Inventors:
Hubertus P Ambrosius, Eindhoven, NL;
Helena J Boerrigter-Lammers, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437129 ; 437127 ; 437133 ; 437944 ; 372 46 ;
Abstract
A method of manufacturing a semiconductor device, such as a semiconductor diode laser, is set forth to form a mesa and current blocking structure on either side of the mesa. In this technique a lift-off step is used to form a contact layer as a direct result of removing semiconductor layers. This is accomplished by using a selective etchant that removes overlying layers, but does not remove a subjacent layer which may be the contact layer. As a result, the growing process is economized by an inexpensive method having a high yield.