The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1992
Filed:
Oct. 12, 1990
Yoshiro Baba, Yokohama, JP;
Yutaka Koshino, Yokohama, JP;
Akihiko Osawa, Machida, JP;
Kenji Yamawaki, Zama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Tokuda Seisakusho Co., Ltd., Kanagawa, JP;
Abstract
A dielectrically isolated structure for use in an SOI-type semiconductor device according to the present invention comprises a substrate having an element-forming region formed therein on a first insulating film, the region being made of a first material, at least one trench formed in the element-forming region and extending to the first insulating film, second insulating films formed on side walls of the trench, and a film made of a second material, and embedded in only an upper portion of the trench such that a bottom portion of the trench is hollow.