The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1992
Filed:
Apr. 19, 1991
Hiroyuki Hara, Fujisawa, JP;
Yasuhiro Sugimoto, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A P-channel MOSFET includes a gate for receiving an input signal, a source connected to a power supply terminal to which a high power supply voltage is applied, and a drain connected to the base of an NPN bipolar transistor at an output stage. The collector of the bipolar transistor is connected to the power supply terminal and the emitter thereof is connected to an output terminal. An N-channel MOSFET includes a gate for receiving the input signal, a drain connected to the output terminal, and a source and a back gate both connected to the base of an NPN bipolar transistor at the output stage. The collector of the bipolar transistor is connected to the output terminal, and the emitter thereof is connected to a power supply terminal to which a power supply voltage of ground potential is applied.