The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1992
Filed:
May. 21, 1990
Faivel Pintchovski, Austin, TX (US);
John R Yeargain, Austin, TX (US);
Stanley M Filipiak, Pflugerville, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A process for fabricating an improved semiconductor device is disclosed wherein a protective layer of Al.sub.2 O.sub.3 is selectively formed to encapsulate a refractory-metal conductor. To form the Al.sub.2 O.sub.3 layer, first an Al/refractory-metal alloy is selectively formed on the surface of the refractory-metal conductor, then the Al/refractory-metal alloy is reacted with O.sub.2. The resulting Al.sub.2 O.sub.3 encapsulation layer acts as an O.sub.2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al.sub.2 O.sub.3 layer improves the mechanical compatibility of the refractory-metal conductor with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor.