The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 1992

Filed:

Feb. 25, 1991
Applicant:
Inventors:

Joachim Szczyrbowski, Goldbach, DE;

Stephan Roegels, Rodenbach, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20429808 ; 20419212 ; 20429814 ; 20429819 ;
Abstract

An apparatus for the reactive coating of a substrate 1 with an electrically insultive material, silicon dioxide SiO.sub.2, for example, comprises a power supply 10 connected to a cathode 5 which is disposed in an evacuable coating chamber 15, 15a and surrounds the magnets 7, 8, 9. This cathode electrically interacts with the target 3 which is sputtered and the sputtered particles thereof are deposited on the substrate 1. A process gas and a reactive gas, e.g. argon with oxygen, are introduced into the coating chamber 15, 15a. The apparatus comprises two electrodes 44, 5 which are electrically insulated from one another and from the sputtering chamber 25. The one electrode is a magnetron cathode 5 where the cathode base 11 and the material of the target 3 are electrically connected to each other and the other electrode functions as an anode 44 in the plasma discharge. Provision is made for a DC power supply 10 which has an electrically floating output and the negative pole thereof, with a throttle 45 being interposed and a resistor 46 parallel to it, is connected to cathode 5 and the positive pole thereof via line 40 to anode 44. In order to achieve a stable coating process, a first low-induction, HF-suitable capacitor 34 is inserted between cathode 5 and anode 44 and a second low-induction capacitor 35 between anode 44 and the electrically insulated vacuum chamber 25.


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