The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1992
Filed:
Mar. 12, 1991
Tatsuo Yokotsuka, Kawasaki, JP;
Akira Takamori, Atsugi, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor light-emitting device comprising a substrate formed of GaAs, a cladding layer formed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P and an active layer formed of Ga.sub.y In.sub.1-y P (0.5.ltoreq.y.ltoreq.1) or Ga.sub.y In.sub.1-y P (0.ltoreq.y.ltoreq.0.5), said cladding layer having its composition represented by (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P ((0.ltoreq.x.ltoreq.1), lattice-matched to said GaAs substrate, and said cladding layer having a band-gap size made larger by at least 0.25 eV than said active layer. The device can attain an oscillation wavelength of 0.67 .mu.m or less or from 0.68 .mu.m to 0.78 .mu.m.