The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1992
Filed:
Oct. 01, 1990
Takao Adachi, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A CMOS semiconductor integrated circuit device has an n-(p-)MOS element formed on a p-(n-)type semiconductor substrate and a p-(n-)MOS element formed on an n-(p-)type well region. A substrate potential wiring for providing a substrate potential to the p-(n-)type semiconductor substrate and a source potential wiring connected to the source region of the n-(p-)MOS are provided physically independently from each other, and such potential wiring and such source potential wiring are connected with each other with a resistor being interposed therebetween. Thus, the current which flows in transistors during the operating state of related circuits integrated in the substrate is prevented from flowing into the substrate thereby eliminating any such fluctuations of the substrate potential as may otherwise be caused by the operation of the circuits.