Method of manufacturing by autoalignment an integrated semiconductor

Abstract

A method of manufacturing by autoalignment an integrated semiconductor device is set forth comprising the realization on respective semiconductor layers of a first encapsulated electrode contact E provided with spacers and of a second autoaligned electrode contact B on the first contact thus equipped, which process comprises at least: a.sub.0) the formation of a first and a second semiconductor layer for receiving the first and the second electrode contact, respectively; b.sub.0) the formation by a so-called image reversal method of an opening B.sub.o with overhanging sides in a photoresist layer deposited on the first semiconductor layer; c.sub.0) the deposition of a first metal layer forming the first electrode contact E in this opening, which contact has sides F.sub.2 of a lower height than those F.sub.1 of the photoresist layer, these sides F.sub.2 having upper edges which are situated laterally at a small distance from the overhanging sides F.sub.1 of the opening, thus leaving an aperture around the base of the first contact; d.sub.0) the deposition of a first dielectric layer of a thickness greater than the value of the said small distance, which dielectric layer encapsulates the first contact without filling up the aperture; e.sub.0) the lift-off of the dielectric and metallic layers around the first contact E, which remains encapsulated; f.sub.0) the realization of spacers around the first encapsulated contact E.