The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1992
Filed:
Oct. 04, 1990
Charter D Stinespring, Arthurdale, WV (US);
Andrew Freedman, Chelmsford, MA (US);
Aerodyne Research, Inc., Billerica, MA (US);
Abstract
Disclosed herein is a process for producing a thin film of epitaxial material on a substrate surface at low temperatures under ultrahigh vacuum conditions. In general, precursor compounds are deposited, and converted into the epitaxial material, on the substrate surface at a temperature at which they undergo no substantial dissociation. By way of example, a beam-deposited admixture of dimethyl tellurium and dimethyl cadmium is efficiently converted to an epitaxial cadmium telluride crystal on the surface of a GaAs(100) substrate placed in an ultrahigh vacuum chamber by low power, 193 nm laser irradiation (pulse fluence approximately 6 mJ cm.sup.-2) at substrate temperature of -150.degree. C. and by subsequent annealing at 200.degree. C. for 30 seconds. In addition to efficient use of precursors, this process also permits considerable improvement of pattern resolution.