The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1992
Filed:
Mar. 14, 1990
Applicant:
Inventors:
Mitsugu Irinoda, Sendai, JP;
Koichi Haga, Shibata, JP;
Assignees:
Ricoh Company, Ltd., Tokyo, JP;
Ricoh Research Institute of General Electronics Co., Ltd., Natori, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 332 ; 148 333 ; 156603 ; 156604 ; 437 46 ; 437 62 ; 437 83 ; 437 84 ; 437174 ; 437233 ; 437973 ;
Abstract
A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second regions. Each of the first regions is formed as a strip shape and has a high density of inorganic impurities implanted thereinto. Each of the second regions is formed as a strip shape and has a low density of the impurities. The first and second regions are alternatively arranged contacting with each other so that the first regions are separated from each other.