The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1992
Filed:
Sep. 07, 1988
Abstract
A non-volatile semiconductor memory device is comprised of a floating gate electrode disposed on and electrically insulated from a semiconductor substrate for storing electric charge. A tunnel insulating film is disposed in contact with the floating gate electrode to inject and extract the electric charge to and from the floating gate electrode in the form of an electric tunnel current flowing through the tunnel insulating film. The tunnel insulating film is composed of silicon oxide chemically-vapor-deposited at a temperature between 700.degree. C. and 900.degree. C. from the vapor mixture of dichlorosilane and dinitrogen monoxide on the order of 100 .ANG. thickness to thereby establish a breakdown current density more than 1.0 A/cm.sup.2.