The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1992
Filed:
Mar. 23, 1990
Yutaka Hayashi, Tsukuba, JP;
Yasushi Kondo, Tokyo, JP;
Agency of Industrial Science & Technology, Tokyo, JP;
Ministry of International Trade & Industry, Tokyo, JP;
Abstract
In a method for treating the surface of either crystalline or amorphous silicon a silicon material is maintained in a non-oxidizing atmosphere with a reduced pressure, a gas selected from among hydrides of phosphorus, fluorides of phosphorus, hydrides of arsenic, fluorides of arsenic, hydrides of boron, fluorides of boron and fluorides of silicon is excited and the excited gas is supplied onto the surface of the silicon material for a prescribed period of time. During this period the temperature of the silicon material is maintained within a range higher than the temperature at which the molecules of the selected gas would, were the gas not excited, liquefy at the reduced pressure and deposit on the material and lower than the temperature at which the gas decomposes. The method enables the silicon material surface to be cleaned and/or protected by treatment at a relatively low temperature. The treatment has the effect of improving various electrical, chemical and physical characteristics of the surface of silicon material and as such improves the performance and characteristics of a device or integrated circuit including the silicon material.