The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1992
Filed:
Aug. 29, 1991
Applicant:
Inventors:
Assignee:
North American Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419226 ; 20419215 ;
Abstract
A method of manufacturing ion garnet layers having refractive indices n adjusted in a defined manner and lattice constants a.sub.o adjusted in a defined manner, in which the layers are deposited on a substrate by means of rf cathode sputtering using a target comprising substantially a garnet phase besides residual phases of substantially the same sputtering rates in a noble gas plasma of an ion energy of the ions bombarding the growing layer of smaller than 10.sup.2 eV and at a pressure in the range from 0.1 to 2.0 Pa, the noble gas being doped with up to 5% by volume of at least one reactive gas.