The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1992
Filed:
Oct. 30, 1989
Applicant:
Inventors:
Kenneth E Montgomery, Tracy, CA (US);
Fred P Milanovich, Lafayette, CA (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156621 ; 422245 ; 2330 / ; 156624 ; 156D / ; 156D / ; 156D / ;
Abstract
A crystal is grown in a constantly filtered solution which is flowed directly into the growing face of a crystal. In a continuous flow system, solution at its saturation temperature is removed from a crystal growth tank, heated above its saturation temperature, filtered, cooled back to its saturation temperature, and returned to the tank.
Montgomery, Kenneth. (1992). Direct flow crystal growth system (U.S. Patent No. 5122224). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5122224
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