The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1992
Filed:
Dec. 26, 1990
Hiroki Hozumi, Kanagawa, JP;
Kichio Aida, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In a semiconductor device, a first diffusion region on a surface of an output region for a substrate electric potential, and an element segregation third diffusion region under a field insulating layer, are electrically connected together through a second diffusion region. Thus, the substrate electric potential can be easily output at the surface of the output region, even if the first diffusion region on the surface of the output region is formed shallow by a fabrication process at low temperature due to fine designing of the semiconductor device. A patterning process of the output region in the form of a protruded shape is also required, but the process is completed through a procedure using only one ion implantation and one low temperature thermal oxidation, thereby dramatically simplifying the fabrication process.