The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1992
Filed:
Oct. 23, 1990
Siu-Weng S Wong, Ithaca, NY (US);
Devereaux C Chen, San Jose, CA (US);
Kuang-Yi Chiu, Los Altos Hills, CA (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
A method for forming a contact to a selective region of an integrated circuit characterized by the steps of: forming a layer of refractory metal over and around the selected region; forming a layer of amorphous silicon over the layer of refractory metal; patterning the amorphous silicon in to an elongated strip which extends away from the selected region; annealing the integrated circuit to convert the strip of amorphous silicon into a silicide path; and removing the unreacted refractory metal. The method of the present invention can be used to extend a contact to the source, drain, or gate of a MOSFET from the top of an adjacent section of field oxide, and can also be used as a method for local interconnection of IC devices, such as CMOS devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile