The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 1992

Filed:

Dec. 02, 1988
Applicant:
Inventors:

Nobuyoshi Ogasawara, Itami, JP;

Kotaro Mitsui, Itami, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 16 ; 357-4 ; 136255 ; 136262 ; 136249 ;
Abstract

A light responsive semiconductor includes a second conductivity type semiconductor substrate, a photoelectric conversion layer comprising semiconductor layers having a pn junction, which is disposed on the second conductivity type semiconductor substrate, a buffer layer comprising a second conductivity type semiconductor layer having a larger energy band gap than that of the photoelectric conversion layer. The element further includes a light reflection layer comprising a semiconductor layer which is disposed between the second conductivity type semiconductor substrate and the buffer layer. Alternatively, a light reflection layer which is a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.


Find Patent Forward Citations

Quick Actions:

Ogasawara, Nobuyoshi. (1992). Light responsive heterojunction semiconductor pn element (U.S. Patent No. 5121183). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5121183

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…