The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1992
Filed:
Nov. 09, 1988
Applicant:
Inventor:
Takashi Hosaka, Tokyo, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 35 ; 437 65 ; 437 67 ;
Abstract
A process for manufacturing a trench isolation device is mainly comprised of steps of forming a trench in an impurity ion doped region in a semiconductor substrate after the impurity ion doped region has been formed by ion implantation. The ion energy for the ion implantation is charged from a low energy level to a high energy level, or vice versa, in order to provide a uniform vertical doping profile or a graded vertical doping profile. By this method, field dope layers completely surround the trench in the trench isolation device.
Hosaka, Takashi. (1992). Process for forming isolation trench in ion-implanted region (U.S. Patent No. 5118636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5118636
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile