The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1992
Filed:
Mar. 25, 1988
Arvid N Arvidson, Midland, MI (US);
David J Pasek, Midland, MI (US);
Hemlock Semiconductor Corporation, Hemlock, MI (US);
Abstract
A process for the deposition of pure semiconductor silicon by reductive chemical vapor decomposition of a precursor silane, the process comprising: (1) forming and depositing semiconductor silicon on a heated substrate; (2) separating a mixture enriched in lower-boiling silanes from the effluent gases from the decomposition/deposition reactor; (3) combining the mixture enriched in lower-boiling silanes with additional tetrachlorosilane, so that there is present in the combination less than about 1.0 mole hydrogen bonded to silicon per mole of total silicon; (4) passing the combination through a bed of a solid disproportionation catalyst to facilitate disproportionation of hydrogen-containing silanes and chlorine-containing silanes to produce a stream that is reduced in content of silane, chlorosilane, and dichlorosilane and increased in content of trichlorosilane; and (5) isolating and separating the trichlorosilane.