The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1992
Filed:
Jan. 25, 1989
Sal Mastroianni, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A means and method for forming improved merged complementary bipolar, complementary MOS (CBICMOS) structures is described. The N-channel and N-base devices are gouped in a first isolated semiconductor region and the P-channel and P-base devices are grouped in a second isolated semiconductor region. The two regions are separated by lateral isolation. By sharing internal device regions and arranging the internal device regions in the proper sequence a particularly compact structure is obtained which may be wired to implement a variety of CBICMOS circuits using a single wiring layer. Both CMOS and vertical NPN and PNP bipolar devices are produced in a common substrate by a common process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile