The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1992
Filed:
Apr. 23, 1991
Applicant:
Inventor:
John J Chapman, Ware Neck, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ; G01L / ; G01L / ;
U.S. Cl.
CPC ...
73721 ; 73708 ; 73727 ; 73756 ; 338-4 ;
Abstract
A silicon pressure die is bonded to a borosilicate substrate above a pneumatic port. A Wheatstone bridge circuit is formed on the silicon pressure die and has bridge elements of silicon doped with boron to a deposit density level of approximately 1.times.10.sup.19 -10.sup.21 boron/cm.sup.3. A current source is provided to excite the Wheatstone bridge circuit. In addition, a temperature sensor is provided to provide temperature readings.
Chapman, John. (1992). Pressure transducer and system for cryogenic environments (U.S. Patent No. 5116331). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5116331
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile