The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1992
Filed:
May. 10, 1991
Mohammed N Islam, Hazlet, NJ (US);
Richard E Slusher, Lebanon, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
It has been recognized that AlGaAs-containing planar waveguides can be advantageously used in all-optical gates for wavelengths in the range 1.2-1.7 .mu.m. In particular, such waveguides can produce in radiation pulses of center wavelength, .lambda..sub.s a phase shift of magnitude .pi. or larger while, at the same time, causing attenuation of the pulse by less than 1/e, provided hc/.lambda..sub.x <E.sub.g /2, where E.sub.g is the bandgap associated with the Al.sub.x Ga.sub.2-31 x As-contianing waveguide. In preferred embodiments .lambda..sub.s and/or x are selected such that [hc/(.lambda..sub.s -.DELTA..lambda.]<E.sub.g /2, where .DELTA..lambda. is chosen such that 99% of the pulse energy is contained in the spectral region .lambda..sub.s .+-..DELTA..lambda..