The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1992
Filed:
Sep. 05, 1990
Kouji Murakami, Tokyo, JP;
Taira Matsunaga, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A MOS type semiconductor device and a method for the manufacture of the same are disclosed in which a gate electrode is so formed over a semiconductor substrate of a first conductivity type with a gate insulating film formed therebetween as to provide a three-layered structure composed of a first high melting point metal silicide layer formed on the gate insulating film, high melting point metal layer formed on the first high melting point metal silicide and a second high melting point metal silicide layer formed on the high melting point metal layer. In the gate electrode, a length of the first high melting point silicide layer defined in the same direction as that in which a channel region extends is made smaller in length than the high melting point metal layer.