The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 1992

Filed:

Sep. 16, 1988
Applicant:
Inventors:

Masatoshi Yoshida, Oyama, JP;

Katsuji Shibata, Shimotsuma, JP;

Mitsumasa Kojima, Hitachi, JP;

Hidetaka Satou, Hitachi, JP;

Toshihiko Kato, Tsukuba, JP;

Yasuo Miyadera, Tsukuba, JP;

Masami Yusa, Shimodate, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C08G / ; C08G / ; C08G / ; C08G / ;
U.S. Cl.
CPC ...
528353 ; 528 21 ; 528 23 ; 528 38 ; 528125 ; 528126 ; 528128 ; 528170 ; 528171 ; 528184 ; 528185 ; 528188 ; 528331 ; 528352 ;
Abstract

Disclosed herein are processes for the preparation of polyimide-isoindroquinazolinediones and precursor thereof. These polymers are useful as heat-resistant electric insulation materials, surface coating films for electronic instrument parts and especially suitable for manufacturing a photoresist. The above precursor is produced by reacting a an alkylenebistrimellitate dianhydride, a diaminoamide compound and the other amine. The precursor is readily dehydrated and ring-closed to produce polyimide-isoindroquinazolinedione, which is often conveniently conducted by producing a varnish of the precursor, applying it onto adequate substrates such as silicon wafers, glass plates, metal plates, etc. and then subjecting the coated film to dehydration. The resulting films have excellent physical properties such as good adherence, high tensile strength, low elasticity, etc.


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