The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 1992

Filed:

Nov. 15, 1990
Applicant:
Inventors:

Kenichi Mizuno, Nagoya, JP;

Yo Tajima, Nagoya, JP;

Masakazu Watanabe, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
501 96 ; 501 97 ; 501 98 ; 264 66 ;
Abstract

Silicon nitride base sintered body consists of: 1 to 20 wt % (as oxides) of at least one of rare earth elements; 0.5 to 8 wt % of V (as V.sub.2 O.sub.5); 0.5 to 8 wt % (as oxides) of at least one of Nb, Ta, Cr, Mo and W; sum of the Va and VIa group elements according to the Periodic Table of the International Version (as oxides) being 1 to 10 wt %; and balance silicon nitride. It has high strength of 690-880 MPa (70-90 kgf/mm.sup.2) and high oxidation resistance both at 1350.degree. C. It is produced by 2 stage gas-pressure sintering in pressurized N.sub.2 atmosphere, primarily at 1700.degree.-1900.degree. C. at 1 MPa (10 atm) or less and secondarily at 1600.degree.-1900 C. at 10 MPa (100 atm) or above.


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