The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1992
Filed:
Jan. 29, 1991
Applicant:
Inventor:
Piero Sferlazzo, Linnfield, MA (US);
Assignee:
Eaton Corporation, Cleveland, OH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2504922 ; 250251 ;
Abstract
A sensor positioned relative to an ion beam for use in an ion implantation system for doping semiconductor wafers. The sensor allows relatively accurate determination of ion beam potential so that steps can be taken to minimize this potential. In a preferred design, a number of electrodes are positioned relative the ion beam and biased at control voltages which allow the ion beam potential to be determined. In one embodiment, the ion beam potential is used to control injection of neutralizing electrons into the ion beam.