The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1992
Filed:
Dec. 05, 1989
Applicant:
Inventor:
Shin-Ichi Tanaka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 16 ; 357 22 ; 357 56 ; 357 35 ;
Abstract
The collector-top type transistor according to the present invention has at least principal semiconductor layers of an emitter layer, tunnel barrier layers having electron affinities smaller than those of the emitter and a base, the base layer, and a collector layer formed in the above-mentioned order on a semiconductor substrate in which the injection of the minority carriers from the emitter to the base is controlled by the tunneling mechanism via the tunnel barrier layer where the film thickness of the tunnel barrier layer in the extrinsic transistor region is regulated to be larger than that in the intrinsic transistor region.