The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1992
Filed:
Jul. 05, 1990
Applicant:
Inventors:
Satwinder Malhi, Richardson, TX (US);
Rajiv Shah, Plano, TX (US);
Assignee:
Texax Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-2 ; 357-4 ; 357 59 ; 430319 ;
Abstract
Field effect transistors in which the channel region is made of thin highly doped polysilicon which is preferably also hydrogen passivated.
Malhi, Satwinder. (1992). Polysilicon fets (U.S. Patent No. 5111260). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5111260
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile