The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1992
Filed:
Jul. 06, 1990
Kabushiki Kaisha Toshiba, Kangawa, JP;
Abstract
A method of manufacturing a semiconductor device, in particular a contact portion of the wiring of the device. An insulating layer is formed on a semiconductor substrate, a contact hole is formed on the insulating layer by etching, and a first conductive layer having hollows is formed on the insulating layer and in the contact hole. Next, a flattening layer is formed to flatten the surface of device structure, and a part of the first conductive layer is exposed by etching the flattening layer to permit a part of the flattening layer to remain in hollows of device structure. Next, a second conductive layer is formed on the remaining flattening layer and the exposed part of the first conductive layer, and is connected to the semiconductor substrate.