The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 1992

Filed:

Sep. 28, 1990
Applicant:
Inventor:

David S Hsu, Alexandria, VA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437180 ; 437 44 ; 437 39 ; 437201 ; 437913 ; 148D / ; 148D / ;
Abstract

Nanometer thick vertical metallic structures are fabricated on a substrate by depositing a metallic layer on a substrate surface on which one or more buttresses are formed, etching the metallic layer to expose the horizontal surfaces of the substrate and the buttresses, and etching the substrate to remove the buttresses, thereby producing vertical structures on the substrate. The metallic layer is formed by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, unlike that in conventional CVD reactors. The metallic layer thus formed has a grain size which is fraction of the thickness of the vertical structure.


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